Ferroelectric nonvolatile memory

with non-destructive reading for electronic external memory and information protection systems

Yakov Martinyuk, Olexandr Verba, Kostyantin Samofalov

Computer Science Department, National Technical University of Ukraine “KPI”,

Peremogy ave., 37, Kyiv, 03056, Ukraine, e-mail: olverba@gmail.com

The purpose of the work is to expand functionality volatile ferroelectric memory (FRAM), which is actively growing, and creating line constructing of external electronic memory on a ferroelectric thin film with non-destructive reading, with writing rate and reading rate matches to demands of random access memory (RAM) as well as read only memory (ROM).

One of the disadvantage of traditional FRAM memory is destructive reading and necessity of clock tick for recovery of the information after reading that reduces performance and narrows down a usage in high reliability systems.

We propose and investigated two non-destructive method of reading without switching polarization ferroelectric storage items. One method, called piezotransformeral, uses piezoelectric properties of ferroelectric thin films to determine the direction of its residual polarization, another method, called piezocapacitoral, uses the difference in the dynamic capacity ferroelectric capacitor. We propose the structure and studied ferroelectric volatile storage devices with non-destructive reading on the basis of thin-film piezotransformers and piezocapacitors with reading rate to 10 ns and with density up to 10¹⁰ bit/sm².

This line of investigation offers an possibility to create a fast electronic external memory with non-destructive reading and random access, as well as storage devices for increased reliability of information security systems.