Electronic systems long-term storage of
information
on the basis of nano-scale
structures
Yakov Martinyuk, Olexandr Verba, Igor Skorohod
Computer Science Department,
National Technical University of Ukraine “KPI”,
Peremogy ave., 37, Kyiv, 03056, Ukraine,
e-mail: olverba@gmail.com
The
purpose of the work is the study, development and creation of long-term storage
of information means a large amount of memory with a rapid electronic reading,
random access and recording system based on local modifications nano-scale metallic structures with the use of scanning
probe microscopy.
Proposed
and studied the structure of storage environments on the basis of thin metal
layers of aluminium and zirconium up to 10 nm thick with recording information
through the electrochemical oxidation of selected material storage element plot
probe under the microscope and scanning electronic reading in determining the
value of electric capacity or storage of electrical resistance elements, which
are available on intersections word lines and bite lines. To build a storage
memory elements considered in the form of plots of aluminium oxide or depending
on the stored information, placed between the orthogonal aluminium lines with
layers of zirconium oxide between them. Layers of zirconium oxide function as
technological barriers and, moreover, are an integral part of resistive
capacitive or storage items. Defined that the electrical resistance of word lines
and bite lines make limits of reading speed with increasing the size of memory.
For example, for memory chip with capacity equivalence 1010 bits
with design rules of 45 nm, reading speed can reach 10 ns.
This area of exploration open up possibilities
for creation of devices for writing and long-term storage (for tens years)
extensive archives of the information with density, not less than 1012 bit/sm2,
with high-speed electronic reading and a random access (for units ns)
Creation of the
considered memory devices requires integration of technology achievements of
the traditional microelectronics and nanoelectronics.